* / Advantages:
* MOSFETs in trench technology:
* low RDSon
* optimized intrinsic reverse diode
* Package:
* high level of integration
* high current capability (300 A max.)
* aux. terminals for MOSFET co
MTI85W100GC Datasheet (398.20 KB)
MTI85W100GC
IXYS
398.20 KB
Three phase full bridge.
Three phase full Bridge with Trench MOSFETs in DCB-isolated high-current package MTI85W100GC VDSS = 100 V ID25 = 120 A RDSon typ. = 3.2 mW Par.
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