SN35N120AU1 High Voltage 1 GBT with Diode

IXYS

Description

High Voltage IGBT with Diode IXSN 35N120AU1 VCES IC25 VCE(sat) 3 2 = 1200 V = 70 A = 4V 4 1 Symbol VCES VCGR VGES VGEM IC25 IC90 ICM SSOA (RBSOA).

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Datasheet Specifications

Part number: SN35N120AU1
Manufacturer: IXYS
File Size: 99.20 KB
Datasheet: SN35N120AU1_IXYS.pdf
Description: High Voltage 1 GBT with Diode

Features

* q q q q q q Mounting torque Terminal connection torque (M4) 1.5/13 Nm/lb. in. 1.5/13 Nm/lb. in. 30 g q International standard package miniBLOC (ISOTOP) compatible Aluminium-nitride isolation - high power dissipation Isolation voltage 3000 V~ Low VCE(sat) - for minimum on-state conduction losses

Applications

* q q BVCES VGE(th) ICESÿ IGES VCE(sat) IC IC = 5 mA, VGE = 0 V = 4 mA, VCE = VGE q q q VCE = 0.8
* VCES VGE = 0 V VCE = 0 V, VGE = ±20 V IC = IC90, VGE = 15 V AC motor speed control DC servo and robot drives DC choppers Uninterruptible power supplies (UPS) Switch-mode and resonant-mod

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SN35N120AU1 High Voltage GBT with Diode IXYS

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