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T0500ND25E Datasheet - IXYS

T0500ND25E Insulated Gate Bi-Polar Transistor

Date:- 16 Aug, 2016 Data Sheet Issue:- 1 Insulated Gate Bi-Polar Transistor Type T0500ND25E Absolute Maximum Ratings VCES VDC link VGES VOLTAGE RATINGS Collector emitter voltage Permanent DC voltage for 100 FIT failure rate. Peak gate emitter voltage MAXIMUM LIMITS 2500 1250 ±20 UNITS V V V IC(DC) ICRM IECO PMAX Tj Tstg RATINGS DC collector current, IGBT Repetitive peak collector current, tp=1ms, IGBT Maximum reverse emitter current, tp=100µs, (note 2 & 3) Maximum pow.

T0500ND25E-IXYS.pdf

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Datasheet Details

Part number:

T0500ND25E

Manufacturer:

IXYS

File Size:

411.71 KB

Description:

Insulated gate bi-polar transistor.

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T0500ND25E T0500ND25E Insulated Gate Bi-Polar Transistor IXYS

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