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T0500ND25E - Insulated Gate Bi-Polar Transistor

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Part number T0500ND25E
Manufacturer IXYS
File Size 411.71 KB
Description Insulated Gate Bi-Polar Transistor
Datasheet download datasheet T0500ND25E Datasheet
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Date:- 16 Aug, 2016 Data Sheet Issue:- 1 Insulated Gate Bi-Polar Transistor Type T0500ND25E Absolute Maximum Ratings VCES VDC link VGES VOLTAGE RATINGS Collector – emitter voltage Permanent DC voltage for 100 FIT failure rate. Peak gate – emitter voltage MAXIMUM LIMITS 2500 1250 ±20 UNITS V V V IC(DC) ICRM IECO PMAX Tj Tstg RATINGS DC collector current, IGBT Repetitive peak collector current, tp=1ms, IGBT Maximum reverse emitter current, tp=100µs, (note 2 & 3) Maximum power dissipation, IGBT (Note 2) Operating temperature range. Storage temperature range. Notes: 1) Unless otherwise indicated Tj = 125ºC. 2) Tsink = 25°C, double side cooled. 3) Maximum commutation loop inductance 850nH. MAXIMUM LIMITS 500 1000 500 2.
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