T1600GB45G Datasheet (IXYS) - Insulated Gate Bi-Polar Transistor

T1600GB45G, Insulated Gate Bi-Polar Transistor

Date:- 29th Nov, 2018 Data Sheet Issue:- 2 Insulated Gate Bi-Polar Transistor Type T1600GB45G Absolute Maximum Ratings VCES VDC link VGES VOLTAGE RATINGS Collector emitter voltage Permanent DC voltage for 100 FIT failure rate.

Peak gate emitter voltage MAXIMUM LIMITS 4500 2800 ±20 UNITS V V V IC ICRM IF(DC) IFRM IFSM IFSM2 PMAX PD (di/dt)cr Tj Tstg RATINGS DC collector current, IGBT Repetitive peak collector current, tp=1ms, IGBT Continuous DC forward current, Diode R