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T1600GB45G - Insulated Gate Bi-Polar Transistor

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Part number T1600GB45G
Manufacturer IXYS
File Size 1.06 MB
Description Insulated Gate Bi-Polar Transistor
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    Date:- 29th Nov, 2018 Data Sheet Issue:- 2 Insulated Gate Bi-Polar Transistor Type T1600GB45G Absolute Maximum Ratings VCES VDC link VGES VOLTAGE RATINGS Collector – emitter voltage Permanent DC voltage for 100 FIT failure rate. Peak gate – emitter voltage MAXIMUM LIMITS 4500 2800 ±20 UNITS V V V IC ICRM IF(DC) IFRM IFSM IFSM2 PMAX PD (di/dt)cr Tj Tstg RATINGS DC collector current, IGBT Repetitive peak collector current, tp=1ms, IGBT Continuous DC forward current, Diode Repetitive peak forward current, tp=1ms, Diode Peak non-repetitive surge tp=10ms, VRM=60%VRRM, Diode (Note 4) Peak non-repetitive surge tp=10ms, VRM≤10V, Diode (Note 4) Maximum power dissipation, IGBT (Note 2) Maximum power dissipation, Diode (Note 2) Critical diode di/dt (note 3) Operating temperature range.
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