KSD362 Silicon NPN Power Transistor

Inchange Semiconductor Company

Description

INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor KSD362 .
Collector-Base Breakdown Voltage: V(BR)CBO= 150V(Min). Collector Current- IC= 5A. Collector Power Dissipation: PC= 40W@ TC= 25℃ APPLICAT.

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Datasheet Specifications

Part number: KSD362
Manufacturer: Inchange Semiconductor Company
File Size: 155.67 KB
Datasheet: KSD362_InchangeSemiconductorCompany.pdf
Description: Silicon NPN Power Transistor

Applications

* Designed for B/W TV horizontal deflection output applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 150 V VCEO Collector-Emitter Voltage 70 V www. DataSheet4U. com VEBO Emitter-Base Voltage 8 V IC Collector Current-Continuous Col

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KSD362 Silicon NPN Power Transistor Inchange Semiconductor Company

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