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2N3741R - Silicon PNP Power Transistors

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Part number 2N3741R
Manufacturer Inchange Semiconductor
File Size 141.35 KB
Description Silicon PNP Power Transistors
Datasheet download datasheet 2N3741R Datasheet
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DC Current Gain- : hFE= 30-100@IC= -250mA Wide Area of Safe Operation Collector-Emitter Saturation Voltage- : VCE(sat)= -0.6 V(Max)@ IC = -1A High Gain Low Saturation Voltage APPLICATIONS Designed for use as drivers, switches and medium-power amplifier and general purpose applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -80 V VCEO VEBO IC ICM IB PC Tstg Collector-Emitter Voltage -80 V Emitter-Base Vol

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