2N3741R Silicon PNP Power Transistors

Inchange Semiconductor

Description

INCHANGE Semiconductor isc Silicon PNP Power Transistors isc Product Specification 2N3741R .
DC Current Gain- : hFE= 30-100@IC= -250mA. Wide Area of Safe Operation. Collector-Emitter Saturation Voltage- : VCE(sat)= -0.

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Datasheet Specifications

Part number: 2N3741R
Manufacturer: Inchange Semiconductor
File Size: 141.35 KB
Datasheet: 2N3741R-InchangeSemiconductor.pdf
Description: Silicon PNP Power Transistors

Applications

* Designed for use as drivers, switches and medium-power amplifier and general purpose applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -80 V VCEO VEBO IC ICM IB PC Tstg Collector-Emitter Voltage -80 V Emitter-Base Voltage -7 V Co

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2N3741R Silicon PNP Power Transistors Inchange Semiconductor

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