2N3713 Transistor Datasheet - Inchange Semiconductor

2N3712 - NPN Transistor (Motorola)
2N3712 (SILICON) NPN silicon annular transistor designed for highvoltage DC to VHF amplifier applications. CASE 31 CTO-5) Collector connected to case.

2N3713 - GENERAL PURPOSE POWER TRANSISTOR (Toshiba)
SILICON NPN TRIPLE DIFFUSED TYPE 2N3713 GENERAL PURPOSE POWER TRANSISTOR. POWER REGULATOR, SWITCHING AND SOLENOID DRIVES APPLICATIONS. FEATURES: . .

2N3713 - SILICON NPN TRANSISTORS (Central Semiconductor)
2N3713 2N3715 2N3714 2N3716 SILICON NPN TRANSISTORS w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR 2N3713, 2N3714, 2N371.

2N3713 - NPN silicon power transistors (Motorola)
2N3713 thru 2N3716 (SILICON) CASE 11 (TO-3) NPN silicon power transistors for medium-speed switching and amplifier applications. Complement to PNP t.

2N3713 - Bipolar NPN Device (Seme LAB)
2N3713 Dimensions in mm (inches). 25.15 (0.99) 26.67 (1.05) 10.67 (0.42) 11.18 (0.44) 1.52 (0.06) 3.43 (0.135) 6.35 (0.25) 9.15 (0.36) Bipolar NPN.

2N3713 - EPITAXIAL-BASE TRANSISTORS (Comset Semiconductor)
NPN 2N3713 – 2N3714 – 2N3715 – 2N3716 EPITAXIAL-BASE TRANSISTORS The 2N3713, 2N3714, 2N3715 and 2N3716 are silicon epitaxial-base NPN power transistor.

2N3714 - Silicon NPN Power Transistor (Inchange Semiconductor)
isc Silicon NPN Power Transistor DESCRIPTION ·Excellent Safe Operating Area ·Low Collector-Emitter Saturation Voltage ·100% avalanche tested ·Minimum.

2N3714 - GENERAL PURPOSE POWER TRANSISTOR (Toshiba)
SILICON NPN TRIPLE DIFFUSED TYPE 2N3714 GENERAL PURPOSE POWER TRANSISTOR. POWER REGULATOR, SWITCHING AND SOLENOID DRIVES APPLICATIONS. FEATURES . Hi.

Stock and price