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2N3719 - Silicon PNP Power Transistors

Datasheet Summary

Description

These power transistors are produced by PPC's DOUBLE DIFFUSED PLANAR process.

This technology produces high voltage devices with excellent switching speeds, frequency response, gain linearity, saturation voltages, high current gain, and safe operating areas.

Features

  • Collector-Emitter Sustaining Voltage: VCEO(SUS) = 40 Vdc (Min) - 2N3719 DC Current Gain: hFE = 25-180 @ IC = 1.0 Adc Low Collector-Emitter Saturation Voltage: VCE(sat) = 0.75 Vdc @ IC = 1.0 Adc High Current-Gain - Bandwidth Product: fT = 90 MHz (Typ).
  • Silicon PNP Power Transistors.

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Datasheet preview – 2N3719

Datasheet Details

Part number 2N3719
Manufacturer Microsemi Corporation
File Size 55.77 KB
Description Silicon PNP Power Transistors
Datasheet download datasheet 2N3719 Datasheet
Additional preview pages of the 2N3719 datasheet.

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Full PDF Text Transcription

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7516 Central Industrial Drive Riviera Beach, Florida 33404 PHONE: (561) 842-0305 FAX: (561) 845-7813 APPLICATIONS: • • 2N3719 • High-Speed Switching Medium-Current Switching High-Frequency Amplifiers FEATURES: • Collector-Emitter Sustaining Voltage: VCEO(SUS) = 40 Vdc (Min) - 2N3719 DC Current Gain: hFE = 25-180 @ IC = 1.0 Adc Low Collector-Emitter Saturation Voltage: VCE(sat) = 0.75 Vdc @ IC = 1.0 Adc High Current-Gain - Bandwidth Product: fT = 90 MHz (Typ) • Silicon PNP Power Transistors • • DESCRIPTION: These power transistors are produced by PPC's DOUBLE DIFFUSED PLANAR process. This technology produces high voltage devices with excellent switching speeds, frequency response, gain linearity, saturation voltages, high current gain, and safe operating areas.
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