2N3719 Datasheet - Microsemi Corporation

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2N3719 Silicon PNP Power Transistors

7516 Central Industrial Drive Riviera Beach, Florida 33404 PHONE: (561) 842-0305 FAX: (561) 845-7813 APPLICATIONS: * * 2N3719 <.
These power transistors are produced by PPC's DOUBLE DIFFUSED PLANAR process.

2N3719_MicrosemiCorporation.pdf

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Datasheet Details

Part number:

2N3719

Manufacturer:

Microsemi ↗ Corporation

File Size:

55.77 KB

Description:

Silicon PNP Power Transistors

Features

* Collector-Emitter Sustaining Voltage: VCEO(SUS) = 40 Vdc (Min) - 2N3719 DC Current Gain: hFE = 25-180 @ IC = 1.0 Adc Low Collector-Emitter Saturation Voltage: VCE(sat) = 0.75 Vdc @ IC = 1.0 Adc High Current-Gain - Bandwidth Product: fT = 90 MHz (Typ)
* Silicon PNP Power Transis

Applications

* 2N3719

2N3719 Distributors

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