* Low Saturation Voltage: 0.6 VCE(sat) @ IC = 1.0 Amp High Gain Characteristics: hFE @ IC = 250 mA: 30-100 Excellent Safe Area Limits Complementary to NPN 2N3767 (2N3741) Medium Power PNP Transistors DESCRIPTION: These power transistors are produced by PPC's
2N3741
Microsemi ↗ Corporation
62.35 KB
Medium power pnp transistors.
7516 Central Industrial Drive Riviera Beach, Florida 33404 PHONE: (561) 842-0305 FAX: (561) 845-7813
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2N3.
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