2N3720 Datasheet - Microsemi Corporation

2N3720 Silicon PNP Power Transistors

These power transistors are produced by PPC's DOUBLE DIFFUSED PLANAR process. This technology produces high voltage devices with excellent switching speeds, frequency response, gain linearity, saturation voltages, high current gain, and safe operating areas. They are intended for use in Commercial,.

2N3720 Features

* Collector-Emitter Sustaining Voltage: VCEO(SUS) = 60 Vdc (Min) - 2N3720 DC Current Gain: hFE = 25-180 @ IC = 1.0 Adc Low Collector-Emitter Saturation Voltage: VCE(sat) = 0.75 Vdc @ IC = 1.0 Adc High Current-Gain - Bandwidth Product: fT = 90 MHz (Typ)

* Silicon PNP Power Transis

2N3720_MicrosemiCorporation.pdf