2N3712 Datasheet (Motorola)

2N3712, NPN Transistor

2N3712 (SILICON) NPN silicon annular transistor designed for highvoltage DC to VHF amplifier applications.

CASE 31 CTO-5) Collector connected to case MAXIMUM RATINGS Rating Symbol Collector-Emitter Voltage VCEO Collector-Base Voltage VCB Emitter-Base Voltage VEB Collector Current IC Total Device Dissipation @ TA =25°C Derate above 25°C Total Device Dissipation @ TC = 25°C Derate above 25°C Operating and Storage Junction Temperature Range PD PD TJ, Tstg Value 150 150 5.0 200 1.0 5.7