2SA651 Silicon PNP Transistor

Inchange Semiconductor

Description

isc Silicon PNP Power Transistor 2SA651 .
Collector-Emitter Breakdown Voltage- : V(BR)CEO= -150V(Min. Wide Area of Safe Operation. Minimum Lot-to-Lot variations for robust devic.

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Datasheet Specifications

Part number: 2SA651
Manufacturer: Inchange Semiconductor
File Size: 189.06 KB
Datasheet: 2SA651-InchangeSemiconductor.pdf
Description: Silicon PNP Transistor

Applications

* Designed for audio power amplifier applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -200 V VCEO Collector-Emitter Voltage -150 V VEBO Emitter-Base Voltage -5 V IC Collector Current-Continuous PC Collector Power Dissipation

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2SA651 Silicon PNP Transistor Inchange Semiconductor

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