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2SA651 Silicon PNP Transistor

2SA651 Description

isc Silicon PNP Power Transistor 2SA651 .
Collector-Emitter Breakdown Voltage- : V(BR)CEO= -150V(Min. Wide Area of Safe Operation. Minimum Lot-to-Lot variations for robust devic.

2SA651 Applications

* Designed for audio power amplifier applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -200 V VCEO Collector-Emitter Voltage -150 V VEBO Emitter-Base Voltage -5 V IC Collector Current-Continuous PC Collector Power Dissipation

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Datasheet Details

Part number
2SA651
Manufacturer
Inchange Semiconductor
File Size
189.06 KB
Datasheet
2SA651-InchangeSemiconductor.pdf
Description
Silicon PNP Transistor

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Silicon PNP Transistor Inchange Semiconductor
Inchange Semiconductor 2SA651-like datasheet