2SA652 Silicon PNP Power Transistor

Inchange Semiconductor

Description

isc Silicon PNP Power Transistor .
Collector-Emitter Breakdown Voltage- : V(BR)CEO= -100V(Min. Contunuous Collector Current IC= -1A. Power DissipationPC= 15W @TC= 25℃.

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Datasheet Specifications

Part number: 2SA652
Manufacturer: Inchange Semiconductor
File Size: 190.39 KB
Datasheet: 2SA652-InchangeSemiconductor.pdf
Description: Silicon PNP Power Transistor

Applications

* Designed for low frequency power amplifier color TV vertical deflection output applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -150 V VCEO Collector-Emitter Voltage -100 V VEBO Emitter-Base Voltage -6 V IC Collector Curren

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2SA652 Silicon PNP Power Transistor Inchange Semiconductor

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