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2SB955 Silicon PNP Power Transistor

2SB955 Description

isc Silicon PNP Darlington Power Transistor 2SB955 .
High DC Current Gain- : hFE = 1000(Min)@ IC= -5A. Collector-Emitter Breakdown Voltage- : V(BR)CEO = -120V(Min). Low Collector-Emitter Sat.

2SB955 Applications

* Designed for power switching applications. ABSOLUTE MAXIMUM RATINGS (Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -120 V VCEO Collector-Emitter Voltage -120 V VEBO Emitter-Base Voltage -7 V IC Collector Current-Continuous -10 A ICM Collector Current-Peak

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Datasheet Details

Part number
2SB955
Manufacturer
Inchange Semiconductor
File Size
213.64 KB
Datasheet
2SB955-InchangeSemiconductor.pdf
Description
Silicon PNP Power Transistor

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Silicon PNP Power Transistor Inchange Semiconductor
Inchange Semiconductor 2SB955-like datasheet