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2SB900 Datasheet - Inchange Semiconductor

2SB900 Silicon PNP Power Transistor

*Collector-Emitter BreakdownVoltage- : V(BR)CEO= -50V(Min.) *Low Collector Saturation Voltage- : VCE(sat)= -1.0(Max.) @IC= -2A *Wide area of safe operation *Good Linearity of hFE *Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS .

2SB900_InchangeSemiconductor.pdf

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Datasheet Details

Part number:

2SB900

Manufacturer:

Inchange Semiconductor

File Size:

183.99 KB

Description:

Silicon pnp power transistor.

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2SB900 2SB900 Silicon PNP Power Transistor Inchange Semiconductor

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