2SB900 Datasheet, Transistor, Inchange Semiconductor

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2SB900

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Inchange Semiconductor

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183.99kb

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📄 Datasheet

Description:

Silicon pnp power transistor.

Collector-Emitter BreakdownVoltage- : V(BR)CEO= -50V(Min.)

Low Collector Saturation Voltage- : VCE(sat)= -1.0(Max.)

2SB900 Application

• Applications
• Designed for power amplifier and switching applications . ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VC

TAGS

2SB900

Inchange Semiconductor

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