2SB900 Silicon PNP Power Transistor

Inchange Semiconductor

Description

isc Silicon PNP Power Transistor INCHANGE Semiconductor 2SB900 .
Collector-Emitter BreakdownVoltage- : V(BR)CEO= -50V(Min. Low Collector Saturation Voltage- : VCE(sat)= -1. Wide area.

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Datasheet Specifications

Part number: 2SB900
Manufacturer: Inchange Semiconductor
File Size: 183.99 KB
Datasheet: 2SB900_InchangeSemiconductor.pdf
Description: Silicon PNP Power Transistor

Applications

* Designed for power amplifier and switching applications . ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -50 V VCEO Collector-Emitter Voltage -50 V VEBO Emitter-Base Voltage -6 V IC Collector Current-Continuous -4 A ICM Collector C

2SB900 Distributors

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2SB900 Silicon PNP Power Transistor Inchange Semiconductor

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