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TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process)
2SB905
2SB905
Power Amplifier Applications
• Complementary to SD1220
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Base current
Collector power dissipation
Ta = 25°C Tc = 25°C
Junction temperature
Storage temperature range
VCBO VCEO VEBO
IC IB
PC
Tj Tstg
−150 −150
−6 −1.5 −1.0 1.0 10 150 −55 to 150
V V V A A
W
°C °C
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e.
2SB905 Datasheet
