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2SB901 - PNP Transistor

2SB901 Description

isc Silicon PNP Power Transistor INCHANGE Semiconductor 2SB901 .
Collector-Emitter BreakdownVoltage- : V(BR)CEO= -60V(Min. Low Collector Saturation Voltage- : VCE(sat)= -1. Wide area.

2SB901 Applications

* Designed for power amplifier and switching applications . ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -60 V VCEO Collector-Emitter Voltage -60 V VEBO Emitter-Base Voltage -6 V IC Collector Current-Continuous -4 A ICM Collector C

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Datasheet Details

Part number
2SB901
Manufacturer
INCHANGE
File Size
180.45 KB
Datasheet
2SB901-INCHANGE.pdf
Description
PNP Transistor

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PNP Transistor INCHANGE
INCHANGE 2SB901-like datasheet