2SB901 - PNP Transistor
*Collector-Emitter BreakdownVoltage- : V(BR)CEO= -60V(Min.) *Low Collector Saturation Voltage- : VCE(sat)= -1.0(Max.) @IC= -2A *Wide area of safe operation *Good Linearity of hFE *Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS
