2SB901 PNP Transistor

INCHANGE

Description

isc Silicon PNP Power Transistor INCHANGE Semiconductor 2SB901 .
Collector-Emitter BreakdownVoltage- : V(BR)CEO= -60V(Min. Low Collector Saturation Voltage- : VCE(sat)= -1. Wide area.

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Datasheet Specifications

Part number: 2SB901
Manufacturer: INCHANGE
File Size: 180.45 KB
Datasheet: 2SB901-INCHANGE.pdf
Description: PNP Transistor

Applications

* Designed for power amplifier and switching applications . ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -60 V VCEO Collector-Emitter Voltage -60 V VEBO Emitter-Base Voltage -6 V IC Collector Current-Continuous -4 A ICM Collector C

2SB901 Distributors

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2SB901 PNP Transistor INCHANGE

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