2SB974 Datasheet - Inchange Semiconductor

2SB974, Silicon PNP Darlington Power Transistor

INCHANGE Semiconductor isc Silicon PNP Darlingtion Power Transistor 2SB974 .
High DC Current Gain- : hFE = 2000(Min)@ IC= -2A. Low Collector-Emitter Saturation Voltage- : VCE(sat) = -1. Complement.

2SB974_InchangeSemiconductor.pdf

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Datasheet Details

Part number:

2SB974

Manufacturer:

Inchange Semiconductor

File Size:

189.84 KB

Description:

Silicon PNP Darlington Power Transistor

Applications

* Designed for audio frequency power amplifier and low-speed switching industrial use. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -100 V VCEO Collector-Emitter Voltage -100 V VEBO Emitter-Base Voltage -7 V IC Collector Current-Conti

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2SB974 Silicon PNP Darlington Power Transistor Inchange Semiconductor

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