2SC898 Silicon NPN Power Transistor

Inchange Semiconductor

Description

isc Silicon NPN Power Transistor .
Collector-Emitter Breakdown Voltage: V(BR)CEO= 150V (Min). Low Collector Saturation Voltage: VCE(sat)= 1. Minimum Lot-to.

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Datasheet Specifications

Part number: 2SC898
Manufacturer: Inchange Semiconductor
File Size: 185.75 KB
Datasheet: 2SC898_InchangeSemiconductor.pdf
Description: Silicon NPN Power Transistor

Applications

* Designed for amplifier applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER MAX UNIT VCBO Collector-Base Voltage 150 V VCEO Collector-Emitter Voltage 150 V VEBO Emitter-Base Voltage 5 V IC Collector Current-Continuous PC Collector Power Dissipation @TC=25℃ Tj J

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2SC898 Silicon NPN Power Transistor Inchange Semiconductor

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