Part number:
2SK1940
Manufacturer:
Inchange Semiconductor
File Size:
219.62 KB
Description:
N-channel mosfet transistor.
2SK1940
Inchange Semiconductor
219.62 KB
N-channel mosfet transistor.
📁 Related Datasheet
2SK1940 - N-channel MOS-FET
(Fuji Electric)
2SK1940-01
FAP-IIA Series
> Features
High Speed Switching Low On-Resistance No Secondary Breakdown Low Driving Power High Voltage VGS = ± 30V Guarante.
2SK1940-01 - N-channel MOS-FET
(Fuji Electric)
2SK1940-01
FAP-IIA Series
> Features
High Speed Switching Low On-Resistance No Secondary Breakdown Low Driving Power High Voltage VGS = ± 30V Guarante.
2SK1940-01 - N-Channel MOSFET
(INCHANGE)
isc N-Channel MOSFET Transistor
DESCRIPTION ·Drain Current –ID= 12A@ TC=25℃ ·Drain Source Voltage-
: VDSS= 600V(Min) ·Fast Switching Speed ·Minimum L.
2SK1941 - N-Channel MOSFET Transistor
(Inchange Semiconductor)
isc N-Channel MOSFET Transistor
DESCRIPTION ·Drain Current –ID=16A@ TC=25℃ ·Drain Source Voltage-
: VDSS=600V(Min) ·Fast Switching Speed ·Minimum Lot.
2SK1941-01R - N-channel MOS-FET
(Fuji Electric)
2SK1941-01R
FAP-IIA Series
> Features
High Speed Switching Low On-Resistance No Secondary Breakdown Low Driving Power High Voltage VGS = ± 30V Guarant.
2SK1942 - N-Channel MOSFET Transistor
(Inchange Semiconductor)
isc N-Channel MOSFET Transistor
DESCRIPTION ·Drain Current –ID= 3A@ TC=25℃ ·Drain Source Voltage-
: VDSS= 900V(Min) ·Fast Switching Speed ·Minimum Lo.
2SK1942-01 - N-channel MOS-FET
(Fuji Electric)
2SK1942-01
FAP-IIA Series
> Features
High Speed Switching Low On-Resistance No Secondary Breakdown Low Driving Power High Voltage VGS = ± 30V Guarante.
2SK1942-01 - N-Channel MOSFET
(INCHANGE)
isc N-Channel MOSFET Transistor
DESCRIPTION ·Drain Current –ID= 3A@ TC=25℃ ·Drain Source Voltage-
: VDSS= 900V(Min) ·Fast Switching Speed ·Minimum Lo.
