2sc4159 Silicon NPN Power Transistor

Inchange Semiconductor

Description

isc Silicon NPN Power Transistor INCHANGE Semiconductor 2SC4159 .
High Collector-Emitter Breakdown Voltage- V(BR)CEO= 160V (Min). Large Current Capacity. Complement to Type 2SA1606. 100% avalanche te.

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Datasheet Specifications

Part number: 2sc4159
Manufacturer: Inchange Semiconductor
File Size: 189.59 KB
Datasheet: 2sc4159_InchangeSemiconductor.pdf
Description: Silicon NPN Power Transistor

Applications

* Designed for high-voltage switching, AF power amplifier, 100W output predrivers. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 180 V VCEO Collector-Emitter Voltage 160 V VEBO Emitter-Base Voltage 6.0 V IC Collector Current-Continuous

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2sc4159 Silicon NPN Power Transistor Inchange Semiconductor

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