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2sc4159 - Silicon NPN Power Transistor

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Part number 2sc4159
Manufacturer Inchange Semiconductor
File Size 189.59 KB
Description Silicon NPN Power Transistor
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Description

High Collector-Emitter Breakdown Voltage- V(BR)CEO= 160V (Min) Large Current Capacity Complement to Type 2SA1606 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for high-voltage switching, AF power amplifier, 100W output predrivers.ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 180 V VCEO Collector-Emitter Voltage 160 V VEBO Emitt

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