Part number: 4N10
Manufacturer: Inchange Semiconductor
File Size: 227.29KB
Download: 📄 Datasheet
Description: N-Channel MOSFET Transistor
*Drain Current ID= 4A@ TC=25℃
*Drain Source Voltage-
: VDSS= 100V(Min)
*Static Drain-Source On-Resistance
: RDS(on) = 0.8Ω(Max)
*Fast Switching
*Minim.
*Switching power supplies,converters,AC and DC motor controls
*ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAME.
Image gallery
TAGS
📁 Related Datasheet
4N100 - N-CHANNEL MOSFET
(UTC)
UNISONIC TECHNOLOGIES CO., LTD 4N100
Power MOSFET
4A, 1000V N-CHANNEL POWER MOSFET
DESCRIPTION The UTC 4N100 is an N-channel MOSFET, it uses UTC’s.
4N100-FC - N-CHANNEL POWER MOSFET
(UTC)
UNISONIC TECHNOLOGIES CO., LTD
4N100-FC
4.0A, 1000V N-CHANNEL POWER MOSFET
DESCRIPTION
The UTC 4N100-FC provide excellent RDS(ON), low gate charg.
4N100-FCQ - N-CHANNEL MOSFET
(UTC)
UNISONIC TECHNOLOGIES CO., LTD
4N100-FCQ
Preliminary
4A, 1000V N-CHANNEL POWER MOSFET
1
DESCRIPTION
The UTC 4N100-FCQ provide excellent RDS(ON).
4N120 - N-CHANNEL MOSFET
(UTC)
UNISONIC TECHNOLOGIES CO., LTD
4N120
4.0A, 1200V N-CHANNEL POWER MOSFET
DESCRIPTION The UTC 4N120 provide excellent RDS(ON), low gate charge
and ope.
4N135-P - N-CHANNEL POWER MOSFET
(UTC)
UNISONIC TECHNOLOGIES CO., LTD
4N135-P
Advance
4.0A, 1350V N-CHANNEL POWER MOSFET
DESCRIPTION
The UTC 4N135-P is a high voltage and high current.
4N150 - N-CHANNEL POWER MOSFET
(UTC)
UNISONIC TECHNOLOGIES CO., LTD 4N150
Power MOSFET
4.0A, 1500V N-CHANNEL POWER MOSFET
1 TO-220
1 TO-220F
DESCRIPTION
The UTC 4N150 is a high vol.
4N150 - N-CHANNEL MOSFET
(STMicroelectronics)
STFW4N150 STP4N150, STW4N150
N-channel 1500 V, 5 Ω, 4 A, PowerMESH™ Power MOSFET in TO-220, TO-247, TO-3PF
Features
Type
VDSS RDS(on) max ID
Pw
S.
4N150-P - N-CHANNEL POWER MOSFET
(UTC)
UNISONIC TECHNOLOGIES CO., LTD
4N150-P
Preliminary
4.0A, 1500V N-CHANNEL POWER MOSFET
DESCRIPTION
The UTC 4N150-P is a high voltage and high cur.
4N03L02 - Power-Transistor
(Infineon)
OptiMOS®-T2 Power-Transistor
Features • N-channel - Enhancement mode • Automotive AEC Q101 qualified • MSL1 up to 260°C peak reflow • 175°C operating .
4N041R1 - Power-Transistor
(Infineon)
IPLU300N04S4-1R1
OptiMOS™-T2 Power-Transistor
Features • N-channel - Enhancement mode • AEC qualified • MSL1 up to 260°C peak reflow • 175°C operatin.
