4N10 Datasheet - Inchange Semiconductor

4N10 N-Channel MOSFET Transistor

4N10 Features

* Drain Current ID= 4A@ TC=25℃

* Drain Source Voltage- : VDSS= 100V(Min)

* Static Drain-Source On-Resistance : RDS(on) = 0.8Ω(Max)

* Fast Switching

* Minimum Lot-to-Lot variations for robust device performance and reliable operation

* APPLICATIONS

* Switching power supplies,con

Datasheet Details

4N10

Inchange Semiconductor

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N-channel mosfet transistor.

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4N10 N-Channel MOSFET Transistor Inchange Semiconductor

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