4N100-FCQ - N-CHANNEL MOSFET

UTC

Datasheet Details

The UTC 4N100-FCQ provide excellent RDS(ON), low gate charge and operation with low gate voltages.

S.
RDS(ON) ≤ 6.7 Ω @ VGS=10V, ID=1.0A.
Fast switching capability.
Avalanche energy specified.
Improved dv/dt capability, high ruggedness.
SYMBOL 2.Drain TO-220F 1 1 TO-251 Power MOSFET 1 TO-220F1 TO-220F2 1 TO-252 1.Gate 3.Source.

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Published: Apr 22, 2020 |