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5N65 N-Channel MOSFET Transistor

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Description

isc N-Channel MOSFET Transistor INCHANGE Semiconductor 5N65 *.

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Datasheet Specifications

Part number
5N65
Manufacturer
Inchange Semiconductor
File Size
228.96 KB
Datasheet
5N65-InchangeSemiconductor.pdf
Description
N-Channel MOSFET Transistor

Features

* Drain Current ID= 5A@ TC=25℃
* Drain Source Voltage : VDSS= 650V(Min)
* Static Drain-Source On-Resistance : RDS(on) = 2.4Ω(Max) @VGS = 10 V
* Avalanche Energy Specified
* Fast Switching
* Simple Drive Requirements
* Minimum Lot-to-Lot variations for robust device performance a

Applications

* Designed for high efficiency switch mode power supply.
* ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage 650 V VGS Gate-Source Voltage-Continuous ±20 V ID Drain Current-Continuous 5 A IDM Drain Current-Single Plused 20 A PD Total

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