BD263 Silicon NPN Power Transistor

Inchange Semiconductor

Description

isc Silicon NPN Darlington Power Transistor .
Collector. Emitter Breakdown Voltage. : V(BR)CEO = 60V. DC Current Gain. : hFE = 750(Min) @ IC= 1. Minimum Lot.

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Datasheet Specifications

Part number: BD263
Manufacturer: Inchange Semiconductor
File Size: 207.79 KB
Datasheet: BD263-InchangeSemiconductor.pdf
Description: Silicon NPN Power Transistor

Applications

* Designed for use as output devices in complementary general-purpose amplifier applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 80 V VCEO Collector-Emitter Voltage 60 V VEBO Emitter-Base Voltage 5 V IC Collector Current-Con

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BD263 Silicon NPN Power Transistor Inchange Semiconductor

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