BD201 Silicon NPN Power Transistor

Inchange Semiconductor

Description

isc Silicon NPN Power Transistor BD201/203 .
Collector-Emitter Breakdown Voltage- : V(BR)CEO = 45V(Min)- BD201 60V(Min)- BD203. Complement to Type BD202/204. Minimum Lot-to-Lot varia.

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Datasheet Specifications

Part number: BD201
Manufacturer: Inchange Semiconductor
File Size: 211.40 KB
Datasheet: BD201_InchangeSemiconductor.pdf
Description: Silicon NPN Power Transistor

Applications

* Designed for use in hi-fi equipment delivering an output of 15 to 15 W into a 4Ωor 8Ωload. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT BD201 60 VCBO Collector-Base Voltage V BD203 60 BD201 45 VCEO Collector-Emitter Voltage V BD203 60 VEBO Emitter-Base Volta

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📁 Related Datasheet

BD201F BD202F BD203 BD203F BD2040J50100AHF BD204115

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BD201 Silicon NPN Power Transistor Inchange Semiconductor

Inchange Semiconductor BD201-like datasheet