BDT64C, BDT64 Silicon PNP Darlington Power Transistor

Inchange Semiconductor

Description

isc Silicon PNP Darlington Power Transistor .
Collector Current -IC= -12A. High DC Current Gain-hFE= 1000(Min)@ IC= -5A. Complement to Type BDT65/A/B/C. Minimum Lot-to-Lot variati.

📥 Download Datasheet

BDT64C Datasheet Preview — This datasheet PDF includes multiple part numbers: BDT64C, BDT64. Please refer to the document for exact specifications by model.

Datasheet Specifications

Part number: BDT64C, BDT64
Manufacturer: Inchange Semiconductor
File Size: 201.92 KB
Datasheet: BDT64_InchangeSemiconductor.pdf
Description: Silicon PNP Darlington Power Transistor
Note: This datasheet PDF includes multiple part numbers: BDT64C, BDT64.
Please refer to the document for exact specifications by model.

Applications

* Designed for audio output stages and general purpose amplifier applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE BDT64 -60 VCER Collector-Emitter Voltage BDT64A BDT64B -80 -100 BDT64C -120 BDT64 -60 VCEO Collector-Emitter Voltage BDT64A BDT64B -80 -100 BDT6

BDT64C Distributors

📁 Related Datasheet

BDT64CF BDT64AF BDT64BF BDT64F BDT60 BDT60A

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BDT64 Silicon PNP Darlington Power Transistor Inchange Semiconductor

Inchange Semiconductor BDT64C-like datasheet