BDT63 Silicon NPN Darlington Power Transistor

Inchange Semiconductor

Description

isc Silicon NPN Darlington Power Transistor .
Collector Current -IC= 10A. High DC Current Gain-hFE= 1000(Min)@ IC= 3A. Complement to Type BDT62/A/B/C. Minimum Lot-to-Lot variation.

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Datasheet Specifications

Part number: BDT63
Manufacturer: Inchange Semiconductor
File Size: 215.88 KB
Datasheet: BDT63_InchangeSemiconductor.pdf
Description: Silicon NPN Darlington Power Transistor

Applications

* Designed for audio output stages and general purpose amplifier applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT BDT63 60 VCER Collector-Emitter Voltage BDT63A 80 BDT63B 100 V BDT63C 120 BDT63 60 VCEO Collector-Emitter Voltage BDT63A 80 BDT63B 100

BDT63 Distributors

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BDT63 Silicon NPN Darlington Power Transistor Inchange Semiconductor

Inchange Semiconductor BDT63-like datasheet