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BDT63C, BDT63 Silicon NPN Darlington Power Transistor

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Description

isc Silicon NPN Darlington Power Transistor .
Collector Current -IC= 10A. High DC Current Gain-hFE= 1000(Min)@ IC= 3A. Complement to Type BDT62/A/B/C. Minimum Lot-to-Lot variation.

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This datasheet PDF includes multiple part numbers: BDT63C, BDT63. Please refer to the document for exact specifications by model.
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Datasheet Specifications

Part number
BDT63C, BDT63
Manufacturer
Inchange Semiconductor
File Size
215.88 KB
Datasheet
BDT63_InchangeSemiconductor.pdf
Description
Silicon NPN Darlington Power Transistor
Note
This datasheet PDF includes multiple part numbers: BDT63C, BDT63.
Please refer to the document for exact specifications by model.

Applications

* Designed for audio output stages and general purpose amplifier applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT BDT63 60 VCER Collector-Emitter Voltage BDT63A 80 BDT63B 100 V BDT63C 120 BDT63 60 VCEO Collector-Emitter Voltage BDT63A 80 BDT63B 100

BDT63C Distributors

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Inchange Semiconductor BDT63C-like datasheet