BDT63B Datasheet, Transistor, Inchange Semiconductor

PDF File Details

Part number:

BDT63B

Manufacturer:

Inchange Semiconductor

File Size:

215.88kb

Download:

📄 Datasheet

Description:

Silicon npn darlington power transistor.

Collector Current -IC= 10A

High DC Current Gain-hFE= 1000(Min)@ IC= 3A

Complement to Type BDT62/A/B/C

BDT63B Application

• Applications
• Designed for audio output stages and general purpose amplifier applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMET

TAGS

BDT63B

Inchange Semiconductor

📁 Related Datasheet

BDT63 - Silicon NPN Darlington Power Transistor (Inchange Semiconductor)
isc Silicon NPN Darlington Power Transistor DESCRIPTION ·Collector Current -IC= 10A ·High DC Current Gain-hFE= 1000(Min)@ IC= 3A ·Complement to Type .

BDT63 - Silicon Darlington Power Transistor (Comset Semiconductors)
SEMICONDUCTORS BDT63-A-B-C SILICON DARLINGTON POWER TRANSISTORS NPN epitaxial-base transistors in a monolithic Dalrington circuit and housed in a TO-.

BDT63A - Silicon NPN Darlington Power Transistor (Inchange Semiconductor)
isc Silicon NPN Darlington Power Transistor DESCRIPTION ·Collector Current -IC= 10A ·High DC Current Gain-hFE= 1000(Min)@ IC= 3A ·Complement to Type .

BDT63A - Silicon Darlington Power Transistor (Comset Semiconductors)
SEMICONDUCTORS BDT63-A-B-C SILICON DARLINGTON POWER TRANSISTORS NPN epitaxial-base transistors in a monolithic Dalrington circuit and housed in a TO-.

BDT63AF - NPN Transistor (INCHANGE)
INCHANGE Semiconductor isc Silicon NPN Darlington Power Transistor isc Product Specification BDT63F/A/B/C DESCRIPTION ·Collector Current -IC= 10A ·H.

BDT63B - Silicon Darlington Power Transistor (Comset Semiconductors)
SEMICONDUCTORS BDT63-A-B-C SILICON DARLINGTON POWER TRANSISTORS NPN epitaxial-base transistors in a monolithic Dalrington circuit and housed in a TO-.

BDT63BF - NPN Transistor (INCHANGE)
INCHANGE Semiconductor isc Silicon NPN Darlington Power Transistor isc Product Specification BDT63F/A/B/C DESCRIPTION ·Collector Current -IC= 10A ·H.

BDT63C - Silicon NPN Darlington Power Transistor (Inchange Semiconductor)
isc Silicon NPN Darlington Power Transistor DESCRIPTION ·Collector Current -IC= 10A ·High DC Current Gain-hFE= 1000(Min)@ IC= 3A ·Complement to Type .

BDT63C - Silicon Darlington Power Transistor (Comset Semiconductors)
SEMICONDUCTORS BDT63-A-B-C SILICON DARLINGTON POWER TRANSISTORS NPN epitaxial-base transistors in a monolithic Dalrington circuit and housed in a TO-.

BDT63CF - NPN Transistor (INCHANGE)
INCHANGE Semiconductor isc Silicon NPN Darlington Power Transistor isc Product Specification BDT63F/A/B/C DESCRIPTION ·Collector Current -IC= 10A ·H.