BDT63F NPN Transistor

INCHANGE

Description

INCHANGE Semiconductor isc Silicon NPN Darlington Power Transistor isc Product Specification BDT63F/A/B/C .
Collector Current -IC= 10A. High DC Current Gain-hFE= 1000(Min)@ IC= 10A. Complement to Type BDT62F/A/B/C. Minimum Lot-to-Lot variati.

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Datasheet Specifications

Part number: BDT63F
Manufacturer: INCHANGE
File Size: 214.39 KB
Datasheet: BDT63F-INCHANGE.pdf
Description: NPN Transistor

Applications

* Designed for audio output stages and general purpose amplifier applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT BDT63F 60 VCER Collector-Emitter Voltage BDT63AF 80 BDT63BF 100 V BDT63CF 120 BDT63F 60 VCEO Collector-Emitter Voltage BDT63AF 80 BDT63

BDT63F Distributors

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BDT63F NPN Transistor INCHANGE

INCHANGE BDT63F-like datasheet