BUL903ED Silicon NPN Power Transistor

Inchange Semiconductor

Description

INCHANGE Semiconductor isc Silicon NPN Power Transistor isc Product Specification BUL903ED .
INTEGRATED ANTISATURATION AND PROTECTIONNETWORK. INTEGRATED ANTIPARALLELCOLLECTOR EMITTER DIODE. HIGH VOLTAGECAPABILITY. LOW SPREADOF.

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Datasheet Specifications

Part number: BUL903ED
Manufacturer: Inchange Semiconductor
File Size: 154.60 KB
Datasheet: BUL903ED-InchangeSemiconductor.pdf
Description: Silicon NPN Power Transistor

Applications

* LAMP ELECTRONIC BALLASTFOR FLUORESCENT LIGHTINGUSING 277V HALF BRIDGECURRENT-FED CONFIGURATION ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VCES Collector-Emitter Voltage (VBE = 0) 900 VCEO Collector-Emitter Voltage(IB = 0) 400 VEBO Emitter-Base Voltage (IC = 0) 7 IC Col

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BUL903ED Silicon NPN Power Transistor Inchange Semiconductor

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