BUP23B Silicon NPN Power Transistor

Inchange Semiconductor

Description

www.DataSheet.co.kr INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistors .
Collector-Emitter Sustaining Voltage: VCEO(SUS)= 400V (Min)-BUP23B 450V (Min)-BUP23C. High Switching Speed APPLICATIONS. Designed for use.

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Datasheet Specifications

Part number: BUP23B
Manufacturer: Inchange Semiconductor
File Size: 184.49 KB
Datasheet: BUP23B_InchangeSemiconductor.pdf
Description: Silicon NPN Power Transistor

Applications

* Designed for use in converters, inverters, switching regulators, motor control systems etc. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER BUP23B BUP23C BUP23B BUP23C VALUE 750 V 850 400 V 450 9 15 30 6 9 125 150 -65~150 V A A A A W ℃ ℃ UNIT BUP23B/C VCES Collector- Emitter Voltage(VBE= 0

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BUP23B Silicon NPN Power Transistor Inchange Semiconductor

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