Datasheet4U Logo Datasheet4U.com

BUW70 Silicon NPN Power Transistor

BUW70 Description

isc Silicon NPN Power Transistor BUW70 .
Collector-Emitter Breakdown Voltage- : V(BR)CEO= 100V(Min. Low Collector Saturation Voltage- : VCE(sat)= 0. High Speed.

BUW70 Applications

* Designed for use in clocked voltage converters. Absolute maximum ratings(Ta=25℃) SYMBOL PARAMETER VCBO Collector-Base Voltage VCEO Collector-Emitter Voltage VEBO Emitter-Base Voltage IC Collector Current-Continuous IB Base Current-Continuous PC Collector Power Dissipation @TC=25℃

📥 Download Datasheet

Preview of BUW70 PDF
datasheet Preview Page 2

Datasheet Details

Part number
BUW70
Manufacturer
Inchange Semiconductor
File Size
203.92 KB
Datasheet
BUW70-InchangeSemiconductor.pdf
Description
Silicon NPN Power Transistor

📁 Related Datasheet

  • BUW73 - Bipolar NPN Device (Seme LAB)
  • BUW75 - Bipolar NPN Device (Seme LAB)
  • BUW76 - Bipolar NPN Device (Seme LAB)
  • BUW77 - Bipolar NPN Device (Seme LAB)
  • BUW1015 - HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR (STMicroelectronics)
  • BUW11 - NPN Transistor (INCHANGE)
  • BUW11A - NPN Transistor (INCHANGE)
  • BUW11AF - Silicon diffused power transistors (NXP)

📌 All Tags

Inchange Semiconductor BUW70-like datasheet