BUW70 Datasheet, Transistor, Inchange Semiconductor

PDF File Details

Part number:

BUW70

Manufacturer:

Inchange Semiconductor

File Size:

203.92kb

Download:

📄 Datasheet

Description:

Silicon npn power transistor.

  • Collector-Emitter Breakdown Voltage- : V(BR)CEO= 100V(Min.)
  • Low Collector Saturation Voltage- : VCE(sat)= 0.8V(Max.

  • Datasheet Preview: BUW70 📥 Download PDF (203.92kb)
    Page 2 of BUW70

    BUW70 Application

    • Applications
    • Designed for use in clocked voltage converters. Absolute maximum ratings(Ta=25℃) SYMBOL PARAMETER VCBO Collector-Base Vol

    TAGS

    BUW70
    Silicon
    NPN
    Power
    Transistor
    Inchange Semiconductor

    📁 Related Datasheet

    BUW71 - Silicon NPN Power Transistor (Inchange Semiconductor)
    isc Silicon NPN Power Transistor BUW71 DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 400V(Min.) ·Low Collector Saturation Voltage- :.

    BUW72 - Silicon NPN Power Transistor (Inchange Semiconductor)
    isc Silicon NPN Power Transistor BUW72 DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 400V(Min.) ·Low Collector Saturation Voltage- :.

    BUW73 - Bipolar NPN Device (Seme LAB)
    BUW73 Dimensions in mm (inches). 25.15 (0.99) 26.67 (1.05) 10.67 (0.42) 11.18 (0.44) 6.35 (0.25) 9.15 (0.36) 1.52 (0.06) 3.43 (0.135) Bipolar NPN D.

    BUW73 - Silicon NPN Power Transistor (Inchange Semiconductor)
    isc Silicon NPN Power Transistor DESCRIPTION ·Collector-Emitter Sustaining Voltage- : VCEO(SUS)= 200V(Min.) ·Low Collector Saturation Voltage- : VCE(.

    BUW74 - Silicon NPN Power Transistor (Inchange Semiconductor)
    isc Silicon NPN Power Transistor BUW74 DESCRIPTION ·Collector-Emitter Sustaining Voltage- : VCEO(SUS)= 250V(Min.) ·High Speed Switching ·Minimum Lot.

    BUW75 - Bipolar NPN Device (Seme LAB)
    BUW75 Dimensions in mm (inches). 25.15 (0.99) 26.67 (1.05) 10.67 (0.42) 11.18 (0.44) 1.52 (0.06) 3.43 (0.135) 6.35 (0.25) 9.15 (0.36) Bipolar NPN .

    BUW75 - Silicon NPN Power Transistor (Inchange Semiconductor)
    isc Silicon NPN Power Transistor DESCRIPTION ·Collector-Emitter Sustaining Voltage- : VCEO(SUS)= 300V(Min.) ·High Speed Switching ·Minimum Lot-to-Lot.

    BUW76 - Bipolar NPN Device (Seme LAB)
    BUW76 Dimensions in mm (inches). 25.15 (0.99) 26.67 (1.05) 10.67 (0.42) 11.18 (0.44) 6.35 (0.25) 9.15 (0.36) 1.52 (0.06) 3.43 (0.135) Bipolar NPN D.

    BUW76 - Silicon NPN Power Transistor (Inchange Semiconductor)
    isc Silicon NPN Power Transistor BUW76 DESCRIPTION ·Collector-Emitter Sustaining Voltage- : VCEO(SUS)= 350V(Min.) ·High Speed Switching ·Minimum Lot.

    BUW77 - Bipolar NPN Device (Seme LAB)
    BUW77 Dimensions in mm (inches). 25.15 (0.99) 26.67 (1.05) 10.67 (0.42) 11.18 (0.44) 6.35 (0.25) 9.15 (0.36) 1.52 (0.06) 3.43 (0.135) Bipolar NPN D.

    Since 2006. D4U Semicon.   |   Datasheet4U.com   |   Contact Us   |   Privacy Policy   |   Purchase of parts