BUW72
Inchange Semiconductor
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Silicon npn power transistor. *Collector-Emitter Breakdown Voltage- : V(BR)CEO= 400V(Min.) *Low Collector Saturation Voltage- : VCE(sat)= 0.8V(Max.) @IC= 4A *High
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BUW70 - Silicon NPN Power Transistor
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DESCRIPTION ·Collector-Emitter Breakdown Voltage-
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:.
BUW71 - Silicon NPN Power Transistor
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DESCRIPTION ·Collector-Emitter Breakdown Voltage-
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BUW73 - Bipolar NPN Device
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Dimensions in mm (inches).
25.15 (0.99) 26.67 (1.05) 10.67 (0.42) 11.18 (0.44)
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1.52 (0.06) 3.43 (0.135)
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Dimensions in mm (inches).
25.15 (0.99) 26.67 (1.05) 10.67 (0.42) 11.18 (0.44) 1.52 (0.06) 3.43 (0.135)
6.35 (0.25) 9.15 (0.36)
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BUW75 - Silicon NPN Power Transistor
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DESCRIPTION ·Collector-Emitter Sustaining Voltage-
: VCEO(SUS)= 300V(Min.) ·High Speed Switching ·Minimum Lot-to-Lot.
BUW76 - Bipolar NPN Device
(Seme LAB)
BUW76
Dimensions in mm (inches).
25.15 (0.99) 26.67 (1.05) 10.67 (0.42) 11.18 (0.44)
6.35 (0.25) 9.15 (0.36)
1.52 (0.06) 3.43 (0.135)
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BUW76 - Silicon NPN Power Transistor
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DESCRIPTION ·Collector-Emitter Sustaining Voltage-
: VCEO(SUS)= 350V(Min.) ·High Speed Switching ·Minimum Lot.
BUW77 - Bipolar NPN Device
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BUW77
Dimensions in mm (inches).
25.15 (0.99) 26.67 (1.05) 10.67 (0.42) 11.18 (0.44)
6.35 (0.25) 9.15 (0.36)
1.52 (0.06) 3.43 (0.135)
Bipolar NPN D.