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BUX12 Silicon NPN Power Transistor

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Description

isc Silicon NPN Power Transistor BUX12 .
Low Collector Saturation Voltage. High Switching Speed. High Current Current Capability. Minimum Lot-to-Lot variations for robust devi.

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Datasheet Specifications

Part number
BUX12
Manufacturer
Inchange Semiconductor
File Size
205.70 KB
Datasheet
BUX12_InchangeSemiconductor.pdf
Description
Silicon NPN Power Transistor

Applications

* Power switching circuits
* Motor control Absolute maximum ratings(Ta=25℃) SYMBOL PARAMETER VCBO VCEX VCEO Collector-Base Voltage Collector-Emitter Voltage VBE= -1.5V Collector-Emitter Voltage VEBO Emitter-Base Voltage IC Collector Current-Continuous ICM Collector Current-Peak IB

BUX12 Distributors

📁 Related Datasheet

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  • BUX10X - NPN MULTI - EPITAXIAL POWER TRANSISTOR (Seme LAB)
  • BUX11 - SILICON MULTI-EPITAXIAL NPN TRANSISTOR (TT)
  • BUX11A - HIGH CURRENT HIGH POWER HIGH SPEED SILICON N-P-N POWER TRANSISTOR (ETC)
  • BUX11N - Bipolar NPN Device (Seme LAB)
  • BUX13 - Bipolar NPN Device (Seme LAB)

📌 All Tags

Silicon NPN Power Transistor Inchange Semiconductor
Inchange Semiconductor BUX12-like datasheet