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isc Silicon NPN Power Transistor
BUX41N
DESCRIPTION · Collector-Emitter Voltage-
: VCEO= 160V(Min) ·High Current Capability ·Good Linearity of hFE ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS ·Designed for high speed, high current, high power
applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO Collector-Base Voltage
220
V
VCEO Collector-Emitter Voltage
160
V
VCEX
Collector-Emitter Voltage VBE= -1.5V
220
V
VCER
Collector-Emitter Voltage RBE= 100Ω
200
V
VEBO
Emitter-Base Voltage
7
V
IC
Collector Current-Continuous
18
A
ICM
Collector Current-Peak
25
A
IB
Base Current-Continuous
PC
Collector Power Dissipation @TC=100℃
TJ
Junction Temperature
3.
BUX41N Datasheet
