BUX41N Datasheet - Inchange Semiconductor

BUX41N, Silicon NPN Power Transistor

isc Silicon NPN Power Transistor BUX41N .
Collector-Emitter Voltage- : VCEO= 160V(Min). High Current Capability. Good Linearity of hFE. Minimum Lot-to-Lot variations for robu.

Applications

* Designed for high speed, high current, high power applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 220 V VCEO Collector-Emitter Voltage 160 V VCEX Collector-Emitter Voltage VBE= -1.5V 220 V VCER Collector-Emitter Voltage RBE

BUX41N-InchangeSemiconductor.pdf