Datasheet4U Logo Datasheet4U.com

CEP18N5

N-Channel MOSFET Transistor

CEP18N5 Features

* Drain Current : ID= 18A@ TC=25℃

* Drain Source Voltage : VDSS= 500V(Min)

* Static Drain-Source On-Resistance : RDS(on) = 0.29Ω(Max) @ VGS= 10V

* 100% avalanche tested

* Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION

* motor drive,

CEP18N5 General Description


*motor drive, DC-DC converter, power switch and solenoid drive. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage 500 V VGS Gate-Source Voltage-Continuous ±30 V ID Drain Current-Continuous 18 A IDM Drain Current-Single Pluse 72 A PD Tot.

CEP18N5 Datasheet (288.78 KB)

Preview of CEP18N5 PDF

Datasheet Details

Part number:

CEP18N5

Manufacturer:

Inchange Semiconductor

File Size:

288.78 KB

Description:

N-channel mosfet transistor.

📁 Related Datasheet

CEP18N5 N-Channel FET (CET)

CEP1012 N-Channel Enhancement Mode Field Transistor (Chino-Excel Technology)

CEP1012L N-Channel Enhancement Mode Field Transistor (Chino-Excel Technology)

CEP10N4 N-Channel MOSFET (CET)

CEP10N6 N-Channel MOSFET (CET)

CEP110P03 P-Channel MOSFET (CET)

CEP1110 Pulse transformer (Sumida)

CEP1112 Pulse transformer (Sumida)

CEP1165 N-Channel MOSFET (CET)

CEP1175 N-Channel MOSFET (CET)

TAGS

CEP18N5 N-Channel MOSFET Transistor Inchange Semiconductor

Image Gallery

CEP18N5 Datasheet Preview Page 2

CEP18N5 Distributor