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D1187 - 2SD1187

D1187 Description

INCHANGE Semiconductor isc Silicon NPN Power Transistor isc Product Specification 2SD1187 .
Collector-Emitter Breakdown Voltage- : V(BR)CEO= 80V(Min). Low Collector Saturation Voltage- : VCE(sat)= 0. High Power.

D1187 Applications

* High power switching applications
* DC-DC converter and DC-AC inverter applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 100 V VCEO Collector-Emitter Voltage 80 V VEBO Emitter-Base Voltage 5V IC Collector Current-Continuous 1

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2SD1187 Inchange Semiconductor
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