D1170 Datasheet - Inchange Semiconductor

Datasheet Details

Part number:

D1170

Manufacturer:

Inchange Semiconductor

File Size:

235.77 KB

Description:

2SD1170

www.DataSheet4U.com INCHANGE Semiconductor isc Product Specification isc Silicon NPN Darlington Power Transistor 2SD1170 DESCRIPTION *Collector-Emitter Breakdown Voltage: V(BR)CEO= 120V(Min) *High DC Current Gain: hFE= 2000( Min.) @(IC= 3A, VCE= 2V) *Low Collector Saturation Voltage

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D1170, 2SD1170

*Collector-Emitter Breakdown Voltage: V(BR)CEO= 120V(Min) *High DC Current Gain: hFE= 2000( Min.) @(IC= 3A, VCE= 2V) *Low Collector Saturation Voltage: VCE(sat)= 1.5V(Max)@ (IC= 3A, IB= 3mA) B APPLICATIONS *Driver for solenoid,motor and general purpose applications.

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