D1170 2SD1170

Inchange Semiconductor

Description

www.DataSheet4U.com INCHANGE Semiconductor isc Product Specification isc Silicon NPN Darlington Power Transistor 2SD1170 .
Collector-Emitter Breakdown Voltage: V(BR)CEO= 120V(Min). High DC Current Gain: hFE= 2000( Min. Low Collector Satura.

📥 Download Datasheet

D1170 Datasheet Preview — Preview of D1170 PDF

Datasheet Specifications

Part number: D1170
Manufacturer: Inchange Semiconductor
File Size: 235.77 KB
Datasheet: D1170-InchangeSemiconductor.pdf
Description: 2SD1170

Applications

* Driver for solenoid,motor and general purpose applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VCBO Collector-Base Voltage VCEO Collector-Emitter Voltage VEBO Emitter-Base Voltage w w s c s i . w VALUE 120 V 120 V 6 V 6 A 10 A 1 A UNIT n c . i m e IC Collector Curren

D1170 Distributors

📁 Related Datasheet

D117EI D110277 D110278 D110279 D110280 D1106

📌 All Tags

D1170 2SD1170 Inchange Semiconductor

Inchange Semiconductor D1170-like datasheet

D1187