Datasheet Details
- Part number
- D1170
- Manufacturer
- Inchange Semiconductor
- File Size
- 235.77 KB
- Datasheet
- D1170-InchangeSemiconductor.pdf
- Description
- 2SD1170
D1170 Description
www.DataSheet4U.com INCHANGE Semiconductor isc Product Specification isc Silicon NPN Darlington Power Transistor 2SD1170 .
Collector-Emitter Breakdown Voltage: V(BR)CEO= 120V(Min).
High DC Current Gain: hFE= 2000( Min.
Low Collector Satura.
D1170 Applications
* Driver for solenoid,motor and general purpose applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL PARAMETER
VCBO
Collector-Base Voltage
VCEO
Collector-Emitter Voltage
VEBO
Emitter-Base Voltage
w w
s c s i . w
VALUE 120 V 120 V 6 V 6 A 10 A 1 A
UNIT
n c . i m e
IC
Collector Curren
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