* High DC Current Gain (5000 or greater).
* Large current capacity and wide ASO.
* Low saturation voltage (VCE(sat)=0.8V typ). Package Dimensions unit:mm 2003B [2SD1111] 5.0 4.0 4.0 5.0 0.45 0.5 2.0 0.6 0.45 0.44 14.0 Specifications Absolute Maximum Ratings at Ta = 25˚C
D1111
Sanyo Semicon Device
69.43 KB
2sd1111.
Ordering number:EN751C
NPN Epitaxial Planar Silicon Darlington Transistor
2SD1111
Driver Applications
Applications
* Motor drivers, printer hamm.
📁 Related Datasheet
D111 - Silicon NPN Power Transistor
(INCHANGE)
INCHANGE Semiconductor
isc Silicon NPN Power Transistor
isc Product Specification
2SD111
DESCRIPTION ·High Power Dissipation-
: PC= 100W@TC= 25℃ ·Hi.
D1113 - 2SD1113
(Hitachi Semiconductor)
2SD1113(K)
Silicon NPN Triple Diffused
..
Application
Igniter
Outline
TO-220AB
2
1 1. Base 2. Collector (Flange) 3. Emitter
1
.
D1115 - 2SD1115
(Hitachi Semiconductor)
2SD1115(K)
Silicon NPN Triple Diffused
..
Application
High voltage switching, igniter
Outline
TO-220AB
1 23
1. Base 2. Collector
(F.
D1117 - 1A LOW DROPOUT LINEAR REGULATOR
(YANGJING MICROELECTRONICS)
SHENZHEN YANGJING MICROELECTRONICS CO.,LTD
1A LOW DROPOUT LINEAR REGULATOR
GENERAL DESCRIPTION The 1117 is a series of low dropout three-terminal egul.
D1118 - 2SD1118
(Fuji Electric)
..
..
..
Fuji Semiconductor, Inc. - P.O. Box 702708 - Dallas, TX 75370 - 972-733-1700 - .fuji.
D111EI - (D111EI Series) High Isolation SIP DC/DC Converters
(MicroPower Direct)
D100EI Series
Low Cost, 1W High Isolation SIP DC/DC Converters
Electrical Specifications
Specifications typical @ +25°C, nominal input voltage & rated o.
