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D458 2SD458

D458 Description

INCHANGE Semiconductor isc Silicon NPN Power Transistors isc Product Specification 2SD458 .
Collector-Emitter Breakdown Voltage- : V(BR)CEO= 400V(Min). High Power Dissipation- : PC= 80W(Max)@TC=25℃ APPLICATIONS. Designed for hig.

D458 Applications

* Designed for high power amplifier and switching applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage VCER Collector-Emitter Voltage RBE= 50Ω VCEO Collector-Emitter Voltage 600 V 600 www. DataSheet. co. kr V 400 V VEBO Emitter-Base

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2SD458 Inchange Semiconductor
Inchange Semiconductor D458-like datasheet