D458 2SD458

Inchange Semiconductor

Description

INCHANGE Semiconductor isc Silicon NPN Power Transistors isc Product Specification 2SD458 .
Collector-Emitter Breakdown Voltage- : V(BR)CEO= 400V(Min). High Power Dissipation- : PC= 80W(Max)@TC=25℃ APPLICATIONS. Designed for hig.

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Datasheet Specifications

Part number: D458
Manufacturer: Inchange Semiconductor
File Size: 109.27 KB
Datasheet: D458-InchangeSemiconductor.pdf
Description: 2SD458

Applications

* Designed for high power amplifier and switching applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage VCER Collector-Emitter Voltage RBE= 50Ω VCEO Collector-Emitter Voltage 600 V 600 www. DataSheet. co. kr V 400 V VEBO Emitter-Base

D458 Distributors

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D458 2SD458 Inchange Semiconductor

Inchange Semiconductor D458-like datasheet