FDA59N25 - N-Channel MOSFET Transistor

Inchange Semiconductor

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Datasheet Details

Part number	FDA59N25
Manufacturer	Inchange Semiconductor
File Size	285.25 KB
Description	N-Channel MOSFET Transistor
Datasheet	FDA59N25-InchangeSemiconductor.pdf

FDA59N25 Product details

Description

motor drive, DC-DC converter, power switch and solenoid drive.ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage 250 V VGS Gate-Source Voltage-Continuous ±30 V ID Drain Current-Continuous 59 A PD Total Dissipation @TC=25℃ 392 W TJ Max.Operating Junction Temperature -55~150 ℃ Tstg Storage Temperature -55~150 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth j-c Thermal Resistance, Junction to Case MAX 0.32 UNIT ℃/W isc web

Features

Drain Current : ID= 59A@ TC=25℃.
Drain Source Voltage : VDSS= 250V(Min).
Static Drain-Source On-Resistance : RDS(on) = 49mΩ(Max).
100% avalanche tested.
Minimum Lot-to-Lot variations for robust device performance and reliable operation.

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Published: Jun 24, 2022 |