KSD5012 Silicon NPN Power Transistor

Inchange Semiconductor

Description

INCHANGE Semiconductor isc Silicon NPN Power Transistor isc Product Specification KSD5012 .
High Breakdown Voltage- : VCBO= 1500V (Min). High Switching Speed. High Reliability. Built-in Damper Diode APPLICATIONS. Designe.

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Datasheet Specifications

Part number: KSD5012
Manufacturer: Inchange Semiconductor
File Size: 131.63 KB
Datasheet: KSD5012-InchangeSemiconductor.pdf
Description: Silicon NPN Power Transistor

Applications

* Designed for color TV horizontal output applicaitions ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 1500 V VCEO Collector-Emitter Voltage 800 V VEBO Emitter-Base Voltage 6V IC Collector Current- Continuous 5 A ICP Collector Current-P

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KSD5012 Silicon NPN Power Transistor Inchange Semiconductor

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