Datasheet4U Logo Datasheet4U.com

KSD5016 Silicon NPN Power Transistor

KSD5016 Description

INCHANGE Semiconductor isc Silicon NPN Power Transistor isc Product Specification KSD5016 .
High Breakdown Voltage- : VCBO= 1500V (Min). High Switching Speed. High Reliability APPLICATIONS. Designed for color TV horizontal o.

KSD5016 Applications

* Designed for color TV horizontal output applicaitions ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 1500 V VCEO Collector-Emitter Voltage 800 V VEBO Emitter-Base Voltage 6V IC Collector Current- Continuous 5 A ICP Collector Current-P

📥 Download Datasheet

Preview of KSD5016 PDF
datasheet Preview Page 2

Datasheet Details

Part number
KSD5016
Manufacturer
Inchange Semiconductor
File Size
129.92 KB
Datasheet
KSD5016-InchangeSemiconductor.pdf
Description
Silicon NPN Power Transistor

📁 Related Datasheet

  • KSD5011 - NPN Transistor (Samsung semiconductor)
  • KSD5013 - NPN Transistor (Samsung semiconductor)
  • KSD5015 - NPN Transistor (Samsung semiconductor)
  • KSD5017 - NPN Transistor (Samsung semiconductor)
  • KSD5018 - NPN Transistor (Fairchild Semiconductor)
  • KSD5003 - NPN Triple Diffused Planar Silicon Transistor (Samsung semiconductor)
  • KSD5004 - NPN Triple Diffused Planar Silicon Transistor (Samsung semiconductor)
  • KSD5005 - NPN Triple Diffused Planar Silicon Transistor (Samsung semiconductor)

📌 All Tags

Silicon NPN Power Transistor Inchange Semiconductor
Inchange Semiconductor KSD5016-like datasheet