KTA1659 Datasheet - Inchange Semiconductor

KTA1659, Silicon PNP Power Transistors

isc Silicon PNP Power Transistor .
High Collector-Emitter Breakdown Voltage VCEO= -160V(Min). Complement to Type KTC4370. Minimum Lot-to-Lot variations for robust device pe.

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Datasheet Details

Part number:

KTA1659

Manufacturer:

Inchange Semiconductor

File Size:

213.32 KB

Description:

Silicon PNP Power Transistors

Applications

* Designed for high voltage applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -160 V VCEO Collector-Emitter Voltage -160 V VEBO Emitter-Base Voltage -5.0 V IC(DC) Collector Current(DC) -1.5 A IB(DC) PC TJ Base Current Coll

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KTA1659 Silicon PNP Power Transistors Inchange Semiconductor

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