MJE13007A Silicon NPN Power Transistor

Inchange Semiconductor

Description

isc Silicon NPN Power Transistor MJE13007A .
Collector. Emitter Sustaining Voltage : VCEO(SUS) = 400V(Min. Collector Saturation Voltage : VCE(sat) = 2. Min.

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Datasheet Specifications

Part number: MJE13007A
Manufacturer: Inchange Semiconductor
File Size: 254.35 KB
Datasheet: MJE13007A-InchangeSemiconductor.pdf
Description: Silicon NPN Power Transistor

Applications

* Designed for use in high-voltage, high-speed. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCEV Collector-Emitter Voltage 850 V VCEO Collector-Emitter Voltage 400 V VEBO Emitter-Base Voltage 9 V IC Collector Current-Continuous 8 A ICM Collector Current-peak

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MJE13007A Silicon NPN Power Transistor Inchange Semiconductor

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