NJD2873 Silicon NPN Power Transistor

Inchange Semiconductor

Description

isc Silicon NPN Power Transistor NJD2873 .
Low Collector-Emitter Saturation Voltage- : VCE(sat)= 0. DC Current Gain -hFE = 120(Min)@ IC= 0. High Curre.

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Datasheet Specifications

Part number: NJD2873
Manufacturer: Inchange Semiconductor
File Size: 215.18 KB
Datasheet: NJD2873-InchangeSemiconductor.pdf
Description: Silicon NPN Power Transistor

Applications

* Designed for high-gain audio amplifier applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 50 V VCEO Collector-Emitter Voltage 50 V VEBO Emitter-Base Voltage 5 V IC Collector Current-Continuous ICM Collector Current-Peak IB

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NJD2873 Silicon NPN Power Transistor Inchange Semiconductor

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