NJD2873 Datasheet, Transistor, Inchange Semiconductor

PDF File Details

Part number:

NJD2873

Manufacturer:

Inchange Semiconductor

File Size:

215.18kb

Download:

📄 Datasheet

Description:

Silicon npn power transistor. *Low Collector-Emitter Saturation Voltage- : VCE(sat)= 0.3V(Max)( IC= 1A; IB= 50mA) *DC Current Gain -hFE = 120(Min)@ IC= 0.5A *High

TAGS

NJD2873

Inchange Semiconductor

📁 Related Datasheet

NJD2873 - Power Transistors (ON Semiconductor)
NJD2873, NJVNJD2873 Power Transistors NPN Silicon DPAK For Surface Mount Applications Designed for high−gain audio amplifier applications. Features.

NJD2873T4 - Power Transistor (ON Semiconductor)
.. NJD2873T4 Plastic Power Transistors NPN Silicon DPAK For Surface Mount Applications Designed for high−gain audio amplifier applic.

NJD1718 - Power Transistors (ON Semiconductor)
NJD1718, NJVNJD1718 Power Transistors PNP Silicon DPAK For Surface Mount Applications Designed for high−gain audio amplifier and power switching appl.

NJD1718 - Silicon PNP Power Transistor (Inchange Semiconductor)
isc Silicon PNP Power Transistor DESCRIPTION ·Low Collector-Emitter Saturation Voltage- : VCE(sat)= -0.5V(Max)( IC= -1A; IB= -0.05A) ·High Switching .

NJD35N04G - NPN Power Transistor (On Semiconductor)
NJD35N04G, NJVNJD35N04G, NJVNJD35N04T4G NPN Darlington Power Transistor This high voltage power Darlington has been specifically designed for induct.

NJD35N04T4G - NPN Transistor (INCHANGE)
isc Silicon NPN Power Transistor DESCRIPTION ·With TO-252(DPAK) packaging ·Reliable performance at higher powers ·Designed for inductive loads ·Fast .

NJ01 - Silicon Junction Field-Effect Transistor (INTERFET)
F-2 01/99 NJ01 Process Silicon Junction Field-Effect Transistor ¥ Low-Current ¥ Low Gate Leakage Current ¥ High Input Impedance Absolute maximum ra.

NJ04 - Air Cylinder Accessory (SMC)
.. .. .

NJ05 - Air Cylinder Accessory (SMC)
.. .. .

NJ07 - Air Cylinder Accessory (SMC)
.. .. .