NJD2873T4 - Power Transistor

ON Semiconductor

Datasheet Details

http://onsemi. com.
Pb.
Free Package is Available.
High DC Current Gain.
hFE = 120 (Min) @ IC = 500 mA = 40 (Min) @ IC = 2 A Low Collector.
Emitter Saturation Voltage.
VCE(sat) = 0.3 Vdc (Max) @ IC = 1 A High Current.
Gain.
Bandwidth Product.
fT = 65 MHz (Min) @ IC = 100 mA Epoxy Meets UL 94 V.
0 @ 0.125 in ESD Ratings: Human Body Model, 3B u 8000 V Machine Model, C u 400 V 1.

📁 NJD2873T4 Similar Datasheet

Other Datasheets by ON Semiconductor

Published: Aug 7, 2006 |