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BAT15-099R
Cross-over ring silicon RF Schottky diodes
Product description
These Infineon RF Schottky diodes are silicon low barrier N-type devices with an integrated guard ring on-chip for over-voltage protection. Their low barrier height, low forward voltage and low junction capacitance make BAT15-099R a suitable choice for mixer functions in applications which frequencies are as high as 12 GHz.
Feature list
• Low inductance LS = 2 nH (typical) • Low capacitance C = 0.29 pF (typical) • Industry standard SOT143 (2.9 mm x 2.4 mm x 1 mm) • Pb-free, RoHS compliant and halogen free
Product validation
Qualified for industrial applications according to the relevant tests of JEDEC47/20/22.
BAT15-099R Datasheet
